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| Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS(on) = = = 300 V 36 A 110 m TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 300 300 20 V V V A A A mJ J V/ns W C C C C C G = Gate S = Source G S (TAB) D = Drain TAB = Drain G DS (TAB) G D S (TAB) TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C 36 90 36 30 1.0 10 300 -55 ... +150 150 -55 ... +150 TO-220 (IXTP) TO-263 (IXTA) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220) 300 260 Features 1.13/10 Nm/lb.in. 5.5 4 3 g g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Md Weight Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 300 2.5 5.0 100 25 250 92 110 V V nA A A m PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS99155(03/04) IXTA 36N30P IXTP 36N30P IXTQ 36N30P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 12 22 2250 VGS = 0 V, VDS = 25 V, f = 1 MHz 370 90 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 (External) 24 30 97 28 70 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 35 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 K/W K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 36 90 1.5 250 2.0 A A V ns C TO-220 (IXTA) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V TO-263 (IXTP) Outline Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig. 1. Output Characteristics @ 25C 36 33 30 27 VGS = 10V 9V 8V 90 80 70 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 24 21 18 15 12 9 6 3 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 6V 7V 60 8V 50 40 30 20 10 0 0 3 6 9 12 15 18 21 24 27 30 6V 7V V D S - Volts Fig. 3. Output Characteristics @ 125C 36 33 30 27 VGS = 10V 9V 8V 3.1 2.8 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 18A I D = 36A I D - Amperes 24 21 18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 9 10 5V 6V 7V -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 4.2 3.8 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID VGS = 10V 40 35 30 R D S ( o n ) - Normalized 3.4 I D - Amperes TJ = 25C 3 2.6 2.2 1.8 1.4 1 0.6 0 10 20 TJ = 125C 25 20 15 10 5 0 30 I D - Amperes 40 50 60 70 80 90 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig. 7. Input Adm ittance 70 60 50 35 30 25 TJ = -40C 25C 125C Fig. 8. Transconductance g f s - Siemens I D - Amperes 40 30 20 10 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 TJ = 125C 25C -40C 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 100 90 80 10 9 8 7 VDS = 150V I D = 18A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 70 VG S - Volts TJ = 25C 0.9 1 1.1 1.2 1.3 60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 TJ = 125C 6 5 4 3 2 1 0 V S D - Volts 0.8 0 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 TJ = 150C R DS(on) Limit TC = 25C Fig. 11. Capacitance 10000 f = 1MHz C iss Capacitance - picoFarads I D - Amperes 1000 C oss 100 25s 100s 10 1ms 10ms DC 1 100 C rss 10 0 5 10 15 V D S - Volts 20 25 30 35 40 10 100 1000 V D S - Volts 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 0.45 0.40 0.35 R ( t h ) J C - C / W 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 1000 Pu ls e W id th - m illis e c o n d s (c) 2004 IXYS All rights reserved |
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